1 edition of Electron Spectrum of Gapless Semiconductors found in the catalog.
|Statement||by Isaak M. Tsidilkovski|
|Series||Springer Series in Solid-State Sciences, 0171-1873 -- 116, Springer series in solid-state sciences -- 116.|
|The Physical Object|
|Format||[electronic resource] /|
|Pagination||1 online resource (IX, 249 pages 58 illustrations).|
|Number of Pages||249|
We propose a reconfigurable magnetic tunnel diode and transistor based on half-metallic magnets (HMMs) and spin gapless semiconductors (SGSs). The two-terminal tunnel diode is composed of a HMM electrode and a SGS electrode separated by a thin insulating (I) tunnel barrier. Depending on the relative orientation of the magnetization of the electrodes, the magnetic tunnel . Spin-gapless semiconductors review (Nanowerk News) A University of Wollongong team has published an extensive review of spin-gapless semiconductors (Small, "Spin-Gapless Semiconductors").Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have fully spin polarised electrons and holes.
The concept of the spin gapless semiconductor in which both electron and hole can be fully spin polarized is proposed, and its possibility is presented on the basis of first-principles electronic structure calculations. Possible new physics and potential applications in spintronic devices based on the spin gapless semiconductors are discussed. Mechanical properties of metals A. The band-structure energy B. The effective interaction between ions, and higher-order terms C. The phonon spectrum D. The electron-phonon interaction and the electron-phonon coupling constant E. Surfaces and liquids Pseudopotential theory of covalent bonding A. The prediction of interatomic matrix elements B.
This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. An Australian has published an extensive review of spin-gapless semiconductors (SGSs), a new class of 'zero bandgap' materials which have fully spin polarised electrons and holes, and first proposed in by the review team's lead, Professor Xiaolin Wang (University of Wollongong). The study tightens the search for materials that would allow for ultra-fast, ultra-low energy 'spintronic.
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Electron Spectrum of Gapless Semiconductors presents the peculiarities of physical properties of a comparatively new class of solids - gapless semiconductors (GS).These peculiarities are determined by the main feature of the elctron spectrum, namely the absence of a.
Electron Spectrum of Gapless Semiconductors presents the peculiarities of physical properties of a comparatively new class of solids - gapless semiconductors (GS). These peculiarities are determined by the main feature of the elctron spectrum, namely the absence of a. Research on gapless semiconductors (of zero forbidden band width because of crystal lattice symmetry or random degeneracy of the conduction and valence bands) is reviewed, and outstanding problems are pointed out.
Energy band structures are described, experimental data confirming the inverted band structure of gapless semiconductors (GSC) are surveyed, the energy spectrum near the center of.
Electron Spectrum of Gapless Semiconductors With 58 Figures and 5 Tables Springer. Contents 1. Introduction 1 2. Band-Structure Calculation Methods 3 Adiabatic Approximation 3 The One-Electron Hartree-Fock Approximation 7 The Hartree Approximation 7.
Semiconductors have a small energy gap, and half-metals have overlapping conduction and valence bands. In one direction of spin, the half-metal is metallic, while in the other it is semiconducting. Gapless semiconductors. Gapless semiconductors are a very new class of solids in which the conduction and valence bands meet at the Fermi level.
At the T-matrix approximation the possibility of dielectric gap formation in single-particle spectrum of gapless semiconductors in the presence of imp. Electron Spectrum of Gapless Semiconductors.
Electron Spectrum of Gapless Tsidilkovski I.M. () Insulators, Semiconductors, Metals. In: Electron Spectrum of Gapless Semiconductors.
Springer Series in Solid-State Sciences, vol Print ISBN ; Online ISBN ; eBook Packages Springer Book Archive; Buy. In gapless semiconductors, such as the first studied HgCdTe and HgCdSe, etc., or the recently widely studied graphene, no threshold energy is required to excite the carriers from valence states to conduction states owing to the zero-width gap, thus achieving considerably higher electron mobility and more sensitive response to the external.
Spin gapless semiconductors are a novel class of materials with unique electrical band structure for different spin channels in such a way that there is no band gap (i.e., 'gapless') for one spin channel while there is a finite gap in another spin channel.
The concept of a spin gapless-semiconductor (SGS) was theoretically proposed a few years ago by X. Wang. In SGS materials, both electrons and holes can be % spin polarized. The characteristic feature of a gapless semiconductor (e.g.
graphene) is that no energy is required to excite electrons from the valence band to the conduction band. We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds.
The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure.
Electron Spectrum of Gapless Semiconductors A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to.
For semiconductor spintronics, ferromagnetic materials with semiconducting electron transport are desired, which stimulated an intensive research on dilute magnetic semiconductors (DMS).
Recently, an interesting class of materials, namely spin-gapless semiconductors (SGS) with electronic band properties similar to those of half-metallic magnets. teraction by gapless electron-hole ﬂuctuations . The theoretical results  agree well with recent experiments on electron doped monolayer MoS2 [24–26].
Here, we study the eﬀect of an applied in-plane mag-netic ﬁeld on the magnetic phase diagram of 2D two-valley semiconductors such as electron doped monolayer. The existence of moving indirect excitons in monolayer graphene is theoretically evidenced in the envelope-function approximation.
The excitons are formed from electrons and holes near the opposite conic points. The electron-hole binding is conditioned by the trigonal warping of the electron spectrum. It is stated that the exciton exists in some sectors of the exciton momentum space and has.
Poklonski, N A Vyrko, S A Siahlo, A I Poklonskaya, O N Ratkevich, S V Hieu, N N and Kocherzhenko, A A Synergy of physical properties of low-dimensional carbon-based systems for nanoscale device design. Materials Research Express, Vol. 6, Issue. 4, p. Figure shows the spectrum of holes and of carriers in a gapless semiconductor in an inﬁnite quantum well calculated in [ 12 ] within the spherical approximation, () 6.
Tsidilkovski, in Electron Spectrum of Gapless Semiconductors, Springer Series in Solid-State Sciences Vol.edited by K. von Klitzing (Springer, New York, ). Google Scholar Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures By J.
Shah Electron Spectrum of Gapless Semiconductors By J. Tsidilkovski Electronic Properties of Fullerenes Editors: H. Kuzmany, J. Fink, M. Mehring, and S. Roth Correlation Effects in Low-Dimensional Electron Systems.
Surface plasmons (SPs) are coherent delocalized electron oscillations that exist at the interface between any two materials where the real part of the dielectric function changes sign across the interface (e.g.
a metal-dielectric interface, such as a metal sheet in air). SPs have lower energy than bulk (or volume) plasmons which quantise the longitudinal electron oscillations about positive. Three-dimensional gapless semiconductors with quadratic band touching, such as HgTe, $\alpha$-Sn, or certain pyrochlore iridates, are believed to display a non-Fermi-liquid ground state due to.Luminescence of semiconductors is nowadays based on very firm background of solid state physics.
The purpose of this book is to introduce the reader to the study of the physical principles underlying inorganic semiconductor luminescence phenomena. It guides the reader starting from the very introductory definitions over luminescence of bulk semiconductors and finishing at the up-to-date.A C.I.P.
Catalogue record for this book is available from the Library of Congress. ISBN (HB) ISBN (e-book) Published by Springer.